Photo-ashing Experimental Unit
Function^Feature Photo ashing is a method to ash and remove a resist on substrate caused by dry etching, using ozone gas and UV.
The UV^Ozone method takes the place of the conventional way of plasma ashing which has been used in the thin-film formation process.
It will be a resist asher of the new age which eliminates the damage caused by the charged particles of plasma with too much energy and is suitable to form a resist pattern of super-high integration.
This unit is aimed to experiment and evaluate processing of 8 and 12 inch silicon wafers by the sheet-feeding system, and is designed to enable various experiments under many different atmospheres.
Manual loading and unloading of samples. Automatic operation can be applied to the processes from ozone gas injection to UV irradiation and ozone ventilation.
Application With the increasing miniaturization of patterns on printed circuit board ,semiconductors industries now require dry ashing systems to process thin films with specified shapes on semiconductor substrates.
Specifications
Photo Ashing Unit Model Name PA800-X
Dimension 650×950×1350(mm)
Weight 250kg
Input Power 100VAC,50Hz,about 3kVA
Power Consumption 2.5kW
Irradiation Irradiation Area 190×103mm
Effective Irradiation Area Ø50.8mm(2inches/substrate)
Stage Temperature 250°C MAX
Irradiation Distance 40mm(center of the lamp)
Light Source Model Name Low Pressure Mercury Lamp SUV140WS-3×2pcs
UV Irradiation Intensity(254nm) 12mW/cm2 at 40mm
Irradiation Distribution Uniformity ±20% at 40mm
Total Lamp Wattage 140W
Ozone Ozone Concentration 6000ppm
Ozone Output 3g/H
Ozonizer ED-OGM-1 (Silent Discharge Type)
UV power meter SEN Power meter UV25-36-3
Others Lamp Cooling Indirect Water Cooling
Water Volume  About 3lit./min
Control Automatic,Manual
Stage Temperature Adjustment 300º C Max. (Adjustable)
Features

1) No charge-up damage due to high energy particles
2) Clean processing without pollution by materials such as heavy metals
3) Processing at a low temperature (250ºC or under) suited for highly integrated elements
4) Accomplishment of high-speed treatments by heating the substrate and the high concentration ozone process
5) High expandability of experiment conditions by introduction of various gases
6) Accomplishment of high efficiency and economic advantages by adopting the high intensity and long-life light source

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