|Photo-ashing Experimental Unit|
|Function^Feature||Photo ashing is a method to ash and remove a resist on substrate caused by dry etching, using ozone gas and UV.
The UV^Ozone method takes the place of the conventional way of plasma ashing which has been used in the thin-film formation process.
It will be a resist asher of the new age which eliminates the damage caused by the charged particles of plasma with too much energy and is suitable to form a resist pattern of super-high integration.
This unit is aimed to experiment and evaluate processing of 8 and 12 inch silicon wafers by the sheet-feeding system, and is designed to enable various experiments under many different atmospheres.
Manual loading and unloading of samples. Automatic operation can be applied to the processes from ozone gas injection to UV irradiation and ozone ventilation.
|Application||With the increasing miniaturization of patterns on printed circuit board ,semiconductors industries now require dry ashing systems to process thin films with specified shapes on semiconductor substrates.|
|Photo Ashing Unit||Model Name||PA800-X|
|Input Power||100VAC,50Hz,about 3kVA|
|Effective Irradiation Area||Ø50.8mm(2inches/substrate)|
|Stage Temperature||250°C MAX|
|Irradiation Distance||40mm(center of the lamp)|
|Light Source||Model Name||Low Pressure Mercury Lamp SUV140WS-3×2pcs|
|UV Irradiation Intensity(254nm)||12mW/cm2 at 40mm|
|Irradiation Distribution Uniformity||±20% at 40mm|
|Total Lamp Wattage||140W|
|Ozonizer||ED-OGM-1 (Silent Discharge Type)|
|UV power meter||SEN Power meter UV25-36-3|
|Others||Lamp Cooling||Indirect Water Cooling|
|Water Volume||About 3lit./min|
|Stage Temperature Adjustment||300º C Max. (Adjustable)|
1) No charge-up damage due to high energy particles